Intel Memory Reliability R&D Engineer in Albuquerque, New Mexico

Job Description

In this position, you will be working as a member of the Non-Volatile Memory (NVM) Solutions Group's (NSG's) Technology Development Quality and Reliability team, helping to develop Intel’s new emerging 3D XPointTM technology and system products, focusing on NVM reliability. Your responsibilities will include but not be limited to:

  • Determining reliability requirements and technology targets of components and systems to achieve company, customer and other reliability objectives;

  • Designing and executing experiments to identify, segment, characterize and model NVM array reliability mechanisms;

  • Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments;

  • Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for process, product and test optimization on reliability issues;

  • Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies and exploration of novel memory cells;

  • Developing the appropriate process- and product-qualification stress methods and criteria;

You may be expected to lead small cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing. You may also be expected to supervise a small team of engineers and/or technicians.

Qualifications

You must have a Master of Science or Ph.D. degree in Electrical Engineering, Materials Science, or Physics.

  • Basic solid understanding of semiconductor device physics, materials science, probability and statistics, circuit design, semiconductor processing, and quantum physics

  • 3+ (PhD) to 6+ (MS) years’ experience outside academia relevant to non-volatile memory technology development

Preferred qualifications:

Prior Intel Intern or Scholarship recipient, Intel full-time experience

Technical skills:

  • 3+ years of experience programming (C or C++, PERL or Python)

  • 3+ years of experience in non-volatile memories, especially in product or device or reliability engineering

  • 3+ years of experience with a range of analytical lab test equipment such as logic analyzer/oscilloscopes, semiconductor parametric analyzer (CV-IV), memory testers, SEM/TEM/IREM.

  • 3+ years of experience with reliability failure statistics, physics, or reliability failure mechanisms.

  • 3+ years of experience in one or more of the following areas: CMOS transistor level circuit design, semiconductor device physics, memory reliability, interconnect reliability, computer or digital systems, or board level design.

  • 3+ years of experience with statistical analysis packages (e.g. R, JMP or Minitab)

  • 3+ years of experience in programming for testing, preferably of memories , and data acquisition, reduction and analysis

  • Knowledge of semiconductor fabrication process, packaging assembly, test and/or board/system level technology operation

  • Ability for systematic analytical problem solving, attention to details and quality of the technical work

  • Demonstrated creativity and innovation in solving technical problems

  • Affinity for cross-disciplinary work

Performance skills:

  • Demonstrated leadership to assume the authority, energize teams and advocate for new ideas

  • Demonstrated ability to work in a fast-paced dynamic environment

  • Demonstrated persistence and commitment to achieving results

  • Ability to clearly communicate achieved results and to influence wide range of audiences

  • Ability to work well in a team setting with people from a wide range of backgrounds

  • Ability to understand the high level picture and apply systems thinking to generate solutions

Inside this Business Group

Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

Other Locations

US, California, Folsom;

Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....